[Audio] NCN Nanoelectronics: Tutorials

Scaling of technology over the last few decades has produced an exponential growth in computing power of integrated circuits and an unprecedented number of transistors integrated into a single. However, scaling is facing several problems — severe short channel effects, exponential increase in leakage current, increased process parameter variations, and new reliability concerns.

The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures will cover device aware CMOS design to address power, reliability, and process variations in scaled technologies for different application domains: high-performance with power as constraint and ultra-low power with reasonable performance.

In recent years, there has been enormous interest in the emerging field of large-area macro-electronics, and fabricating thin-film transistors on flexible substrates. This talk will cover recent work in developing a comprehensive theoretical framework to describe the performance of these "pick-up stick" transistors and to show that an intuitive generalization of finite-size stick percolation theory can consistently interpret a broad range of experimental data reported in the literature.

This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material needs to be included in the device modeling. Atomistic bandstructure effects in resonant tunneling...

Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this familiar device from a different perspective can be useful. The talk will introduce a very simple, general model, then apply it to the planar MOSFET. My objective is to describe the theory in enough detail so that you can intelligently use the program, FETToy, or write a more general program yourself.